美股詳情

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Roundhill Memory ETF

59.10

+0.54000.92%

盤後：58.97-0.1300-0.22%19:59 EDT

成交量：2,207.80萬

成交額：13.07億

市值：259.46億

市盈率：- -

高：60.04

開：60.03

低：58.58

收：58.56

52周最高：81.34

52周最低：26.14

股本：4.39億

流通股本：4.39億

量比：0.68

換手率：5.03%

股息：- -

股息率：- -

淨資產收益率：--

總資產收益率：--

市淨率：--

市盈率(LYR):- -

資料載入中...

總覽公司新聞公告

美股盤後速遞：三大股指期貨全線轉漲；存儲芯片股多數下跌；戴爾營收創新高，盤後升逾8%；特朗普威脅伊朗將遭受「更猛烈」打擊

美股盤後：存儲芯片股多數下跌，SK海力士跌0.67%，美光科技跌0.48%；科技七巨頭升跌不一；戴爾Q2營收創歷史新高，盤後升逾8%

三星電子股價下跌3%。海力士股價下跌3%。

消息稱三星已鎖定約 70% 存儲芯片產能至 2031 年，HBM 長協價僅為現貨五分之一

蔚來汽車首席財務官曲玉今日在公司半年報業績會上表示，今年成本端壓力較大，3月開始，內存、大宗材料和電池的成本均所上升，二

據報三星已鎖定約70%存儲芯片產能至2031年

兆易創新：2027年DRAM供應緊張局面不會明顯緩解

機構：存儲芯片第三季度價格漲幅明顯收窄，部分按月漲幅在 10% 以內

今天公布的韓國8月出口數據中，關鍵要點數據如下： DRAM出口均價(ASP)按月上漲1.8%；閃存(Flash Mem

調研機構群智諮詢（Sigmaintell）發布存儲價格風向標顯示，2026年第三季度，全球存儲市場整體供需依舊緊缺，DR

機構統計存儲芯片第三季度價格漲幅明顯收窄，部分按月漲幅在10%以內

三星電子發布超400層的V10 BV-NAND，I/O速度突破4.8Gbps

存儲短缺或持續到2030年 SK海力士CEO再談內存漲價

群智諮詢：26Q3全球Memory市場漲價幅度明顯放緩市場結構性分化進一步加劇

群智諮詢：26Q3全球Memory市場漲價幅度明顯放緩市場結構性分化進一步加劇

美股盤後速遞：存儲芯片板塊普遍下挫，閃迪跌超1%；現貨金銀齊漲；歐盟將對ChatGPT等3家美國服務平台加強監管

據日經新聞：日本宮城縣正爭取SK海力士(SKHY.US)赴當地建設先進存儲芯片工廠，但面臨美國爭奪投資以及韓國對技術外泄

美股盤前速遞：存儲芯片板塊集體上漲，大型科技股多數下跌；納指期貨漲0.08%；國際油價上漲，通過霍爾木茲海峽商船數量降至每日5艘

機構：三星HBM4出貨提升上調目標價下調SK海力士HBM盈利預期

韓股半導體概念交投活躍，Gate SK 海力士及三星電子持倉量居第二

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