美股詳情

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Roundhill Memory ETF

55.47

-3.6300-6.14%

成交量：2,930.78萬

成交額：16.07億

市值：243.52億

市盈率：- -

高：55.55

開：54.63

低：54.29

收：59.10

52周最高：81.34

52周最低：26.14

股本：4.39億

流通股本：4.39億

量比：1.46

換手率：6.68%

股息：- -

股息率：- -

淨資產收益率：--

總資產收益率：--

市淨率：--

市盈率(LYR):- -

資料載入中...

總覽公司新聞資訊公告

長鑫存儲預計下半年 DRAM 產品供應緊張局面將持續。

SK海力士CEO：存儲短缺將持續到2030年底 HBM即便下行周期需求也不會暴跌

港股存儲芯片概念股下跌，南方兩倍做多SK海力士跌8%，南方兩倍做多三星電子跌超6%，瀾起科技跌4%，兆易創新跌近4%。

A股存儲芯片板塊衝高回落，頻準激光跌近10%，聚和材料、臻寶科技、深科達、普冉股份、同有科技均跌超5%。

內存SoC價格倒掛！12+256GB手機內存組合採購價2200元成本超越旗艦SoC

SK海力士考慮加強與日本存儲芯片行業的合作

环球市场播报

SemiAnalysis：HBF 非 HBM 替代，成本與散熱仍存不確定性

期權聚焦 | SanDisk遠期虛值Put成交233萬美元，押注2026年9月1200行權價，資金提前佈局下行風險？

SK海力士在美舉行HBM先進封裝廠動工儀式

SK海力士美國印第安納州HBM生產基地舉行奠基儀式，預計2029年第三季度開始量產

环球市场播报

SK海力士首席執行官：SK 海力士正在考察全球各地選址，以期為客户創造新的商業機遇。

SK海力士(SKHY.US)CEO：預計內存短缺將持續到2030年底。

SK 海力士首席執行官：尚未看到內存市場出現顯著下行跡象。

SK海力士(SKHY.US)美國首座HBM先進封裝基地正式動工投資逾40億美元 2029年啓動量產

SK 海力士啓動位於印第安納州、投資 40 億美元的存儲中心建設。

存儲芯片漲價掀起消費電子需求前置，百思買大幅上調業績指引

存儲芯片漲價掀起消費電子需求前置百思買(BBY.US)大幅上調業績指引

存儲芯片牛股，淨利潤猛增2207%

8月27日，瑞銀證券中國科技行業研究主管俞佳在「瑞銀證券A股研討會」中國半導體行業專場線上媒體分享會上，預計DRAM供應

瑞銀證券：預計明年NAND價格將上漲30%以上

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